Lang J, Xu F, Wang J, Zhang L, Guo X, Ji C, Zhang Z, Tan F, Fang X, Kang X, et al. On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes. Applied Physics Letters. 2023;123:262103.

Wang L, Xu F, Lang J, Wang J, Zhang L, Guo X, Ji C, Kang X, Yang X, Wang X, et al. Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity Electrodes. IEEE Photonics Journal. 2023;15:8200305.

Wang L, Xu F, Lang J, Wang J, Zhang L, Zhang X, Zhang Z, Guo X, Ji C, Kang X, et al. Transparent p-type layer with highly reflective Rh/Al p-type electrodes for improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes. Japanese Journal of Applied Physics. 2023;62:030904.

Wang J, Xie N, Xu F, Zhang L, Lang J, Kang X, Qin Z, Yang X, Tang N, Wang X, et al. Group-III nitride heteroepitaxial films approaching bulk-class quality. Nature Materials. 2023;22:853.