Zhang J, Wang J*, Xu F*, Tian H, Liu W, Lang J, Ji C, Li W, Gao S, Chen P, et al. Achieving an ultra-thin GaN channel layerin AlGaN/GaN/AlN high electron mobility transistors. Applied Physics Letters. 2026;128:163305.

Ji C, Wang J*, Xu F*, Zhang L, Lang J, Zhang Z, Tan F, Ji C, Zhang J, Zhang E, et al. Wafer Scale III-Nitride Deep-Ultraviolet Vertical-Cavity Surface-Emitting Lasers Featuring Nanometer-Class Control of Cavity Length. Advanced Science. 2026;13:e20405.