Guo X, Xu F, Lang J, Wang J, Zhang L, Ji C, Ji C, Zhang Z, Tan F, Wu Y, et al. Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN. Applied Physics Letters. 2025;126:082104.

Guo X, Lang J, Xu F, Wang J, Zhang L, Zhang Z, Ji C, Tan F, Ji C, Kang X, et al. Improving electrical properties of metal-semiconductor contact on Al-rich n-AlGaN by multi-step annealing. Applied Physics Letters. 2025;127:172104.

Zhang Z, Wang J*, Xu F*, Zhang L, Lang J, Ji C, Zhang J, Kang X, Qin Z, Ju G, et al. Stacking III-nitride ultraviolet-B light emitters with high efficiency via a lattice-engineered architecture. Advanced Materials. 2025;37:e08380.

Ji C, Wang J*, Lang J*, Xu F, Zhang L, Li G, Chen S, Ji C, Zhang J, Xu H, et al. Unveiling and eliminating the parasitic hole loss in AlGaN-based deep-ultraviolet light-emitting diodes. Applied Physics Letters. 2025;126:212107.

Fang X, Wang J*, Xu F*, Zhang L, Lang J, Zhang Z, Tan F, Yang X, Kang X, Qin Z, et al. Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer. Applied Physics Letters. 2024;124:062103.

Wang J, Xu F, Zhang L, Lang J, Fang X, Zhang Z, Guo X, Ji C, Ji C, Tan F, et al. Progress in efficient doping of Al-rich AlGaN. Journal of Semiconductors. 2024;45:021801.

Fang X, Wang J*, Xu F*, Zhang L, Lang J, Guo X, Ji C, Ji C, Wu Y, Yang X, et al. Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping. Applied Physics Letters. 2024;124:152106.

Ji C, Wang J*, Zhang L*, Xu F, Lang J, Guo X, Zhang Z, Tan F, Ji C, Kang X, et al. Ultra-thin p-AlGaN insert layer for enhancing the electrical performance of AlGaN-based deep-ultraviolet light-emitting diodes. Applied Physics Letters. 2024;125:252107.

Wang J, Ji C, Lang J, Xu F, Zhang L, Kang X, Qin Z, Yang X, Tang N, Wang X, et al. Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters. Nature Communications. 2024;15:9398.

Wang J, Xie N, Xu F, Zhang L, Lang J, Kang X, Qin Z, Yang X, Tang N, Wang X, et al. Group-III nitride heteroepitaxial films approaching bulk-class quality. Nature Materials. 2023;22:853.

Wang J, Xu F, Lang J, Fang X, Wang L, Guo X, Ji C, Kang X, Qin Z, Yang X, et al. Regulation of surface kinetics: rapid growth of n-AlGaN with high conductivity for deep-ultraviolet light emitters. CrystEngComm. 2022;24:4251.

Wang J, Wang M, Xu F, Liu B, Lang J, Zhang N, Kang X, Qin Z, Yang X, Wang X, et al. Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping. Light: Science & Applications. 2022;11:71.

Wang J, Xu F, Liu B, Lang J, Zhang N, Kang X, Qin Z, Yang X, Wang X, Ge W, et al. Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms. Applied Physics Letters. 2021;118:162103.