Wang J, Wang M, Xu F, Liu B, Lang J, Zhang N, Kang X, Qin Z, Yang X, Wang X, et al. Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping. Light: Science & Applications. 2022;11:71.

Lang J, Xu F, Sun Y, Zhang N, Wang J, Liu B, Wang L, Xie N, Fang X, Kang X, et al. Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes. IEEE Photonics Journal. 2021;13:8200108.

Liu B, Xu F, Wang J, Lang J, Zhang N, Fang X, Wang L, Yang X, Kang X, Wang X, et al. High quality AlN with uniform in-plane strain on nano-patterned AlN templates achieved by preset strain modulation. Japanese Journal of Applied Physics. 2021;60:120903.

Zhang N, Xu F, Lang J, Wang L, Wang J, Sun Y, Liu B, Xie N, Fang X, Yang X, et al. Improved light extraction efficiency of AlGaN deep-ultraviolet light emitting diodes combining Ag-nanodots/Al reflective electrode with highly transparent p-type layer. Optics Express. 2021;29:2394.

Zhang N, Xu F, Lang J, Wang L, Wang J, Liu B, Fang X, Yang X, Kang X, Wang X, et al. Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment. Applied Physics Letters. 2021;118:222101.

Sun Y, Xu F, Zhang N, Lang J, Wang J, Liu B, Wang L, Xie N, Fang X, Kang X, et al. Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates. CrystEngComm. 2021;23:1201.

Wang J, Xu F, Liu B, Lang J, Zhang N, Kang X, Qin Z, Yang X, Wang X, Ge W, et al. Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms. Applied Physics Letters. 2021;118:162103.