@article {39865,
	title = {Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN},
	journal = {Applied Physics Letters},
	volume = {126},
	year = {2025},
	pages = {082104},
	author = {Xueqi Guo and Xu, Fujun and Jing Lang and Wang, Jiaming and Zhang, Lisheng and Chen Ji and Chengzhi Ji and Ziyao Zhang and Fuyun Tan and Yong Wu and Xiangning Kang and Yang, Xuelin and Tang, Ning and Wang, Xinqiang and Ge, Weikun and Shen, Bo}
}
