Han W, Pi K, Wang WH, McCreary KM, Li Y, Bao W, Wei P, Shi J, Lau CN, Kawakami RK. Spin transport in graphite and graphene spin valves. Proceedings of SPIE - The International Society for Optical Engineering. 2009.
Fluorine ions can be effectively incorporated into AlGaN/GaN high electron mobility transistor (HEMT) structures, enabling the modulation of local potential and carrier density. The physical mechanism of fluorine incorporation in AlGaN/GaN heterojunctions is of fundamental importance to the stability of fluorine ions in AlGaN/GaN HEMTs. In this work, the molecular dynamic (MD) simulation method is used to calculate the potential energies of interstitial and substitutional fluorine atoms in AlGaN/GaN material system. Ziegler-Biersack-Littmark (ZBL), Lindhard-Sorensen (L-S) and Coulomb potential functions are applied in the MD simulation. The geometric lattice structures, spontaneous and piezoelectric polarizations, and temperature dependence are also included in the simulation. The activation energies associated with interstitial-substitutional and interstitial-interstitial diffusions are obtained. It is revealed that the fluorine ions are most likely located at the substitutional group-III cation sites S(III) and the diffusion of fluorine ions should be dominated by S(III)-interstitial process which exhibits an activation energy of 1.1 eV in Al(0.25)Ga(0.75)N and 1.4 eV in GaN in the presence of group-III vacancies. It is expected that the removal of group-III vacancies can significantly suppress the fluorine diffusion, which in turn, leads to excellent fluorine stability in III-nitride materials. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
{{High-spin states of Yb-156 have been studied via the Sm-144(O-16,4n)Yb-156 fusion-evaporation reaction at beam energy 102 MeV. The positive-parity yrast band and negative-parity cascade have been extended up to higher-spin states, respectively. The characteristics of the negative-parity sequence above the 25 state may related to the excitation from the nucleon in the Z = 64
The diffusion properties of fluorine ions in GaN are investigated by means of Time-of-Flight secondary ion mass spectroscopy. Instead of incorporating fluorine ions close to the sample surface by plasma, fluorine ion implantation with an energy of 180 keV is utilized to implant fluorine ions deep into the GaN bulk, preventing the surface effects from affecting the data analysis. It is found that the diffusion of fluorine-ions in GaN is a dynamic process, featuring a two-step process. A defect-assisted diffusion model is proposed to account for the experimental observations. Fluorine ions tend to occupy Ga vacancies induced by fluorine ion implantation and diffuse to vacancy rich regions. The fluorine ions become stable after continuous vacancy chains are significantly reduced or removed by thermal annealing. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim