A Novel Ferroelectric Tunnel FET-based Time-Domain Content Addressable Memory with High Distance-Metric Linearity and Energy Efficiency for Edge Machine Learning

Citation:

Xu W, Luo J, Huang Q, HUANG R. A Novel Ferroelectric Tunnel FET-based Time-Domain Content Addressable Memory with High Distance-Metric Linearity and Energy Efficiency for Edge Machine Learning. 2023 Silicon Nanoelectronics Workshop (SNW). 2023:7-8.