@proceedings {37892,
	title = {A Novel Ferroelectric Tunnel FET-based Time-Domain Content Addressable Memory with High Distance-Metric Linearity and Energy Efficiency for Edge Machine Learning},
	journal = {2023 Silicon Nanoelectronics Workshop (SNW)},
	year = {2023},
	pages = {7-8},
	publisher = {IEEE},
	isbn = {4863488084},
	author = {Xu, Weikai and Luo, Jin and Huang, Qianqian and Ru HUANG}
}
