Ruiyuan's work on border traps in gate recessed GaN MOSFET has been accepted for publication in Applied Physics Letters. Congratulations!

五月 24, 2018

In this work, a direct correlation between the properties of border traps and the recessed surface condition is obtained in gate recessed normally-off GaN MOSFET. We show that the wet etching based gate recess technique leads to lower trapping effect and better reliability for GaN MOSFET.