摘要:

Silane derivatives with wide energy gap (approximate to 3.5 eV) containing different electron-withdrawing groups of quinoline and naphthyridine are synthesized and used as the electron transporting materials. The different electron transporting and hole/exciton blocking properties of the silane derivatives are investigated via multilayered structure of organic electrophosphorescent devices by using fac-tris(2-phenylpyridine) iridium (Ir(ppy)(3)) as the phosphorescent emitter. 15.4% of maximum external quantum efficiency (EQE) corresponding to 56.2 cd A(-1) of maximum current efficiency is obtained with a maximum power efficiency of 58.9 lm W-1 by employing di-(4-(1,8-naphthyridin-2-yl) phenyl) diphenylsilane (DNPS) as the electron transporting material, combining with 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline as the hole blocking layer, which is higher than the performance of conventional Alq(3) device. When changing naphthyridine of DNPS to the electron-withdrawing group of quinoline (di-(4-(isoquinolin-4-yl)phenyl) diphenylsilane), only 11.4% of maximum EQE with 41.4 cd A(-1) of maximum current efficiency and 32.5 lm W-1 of a maximum power efficiency is obtained. These indicate that the electron transporting ability increases while the electron-withdrawing group changes from quinoline to naphthyridine, which is also consistent with the calculated reorganization energy.