<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Chung, Yaohsien</style></author><author><style face="normal" font="default" size="100%">Zheng, Lingling</style></author><author><style face="normal" font="default" size="100%">Xing, Xing</style></author><author><style face="normal" font="default" size="100%">Zhang, Lipei</style></author><author><style face="normal" font="default" size="100%">Bian, Mengying</style></author><author><style face="normal" font="default" size="100%">Xiao, Lixin</style></author><author><style face="normal" font="default" size="100%">Chen, Zhijian</style></author><author><style face="normal" font="default" size="100%">Qu, Bo</style></author><author><style face="normal" font="default" size="100%">Qihuang Gong</style></author><author><style face="normal" font="default" size="100%">Kido, Junji</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">The Effect of Electron-Withdrawing Groups on Electron Transporting Silane Derivatives with Wide Energy Gap for Green Electrophosphorescent Devices</style></title><secondary-title><style face="normal" font="default" size="100%">ADVANCED ELECTRONIC MATERIALS</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2015</style></year><pub-dates><date><style  face="normal" font="default" size="100%">FEB</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">1-2</style></number><volume><style face="normal" font="default" size="100%">1</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Silane derivatives with wide energy gap (approximate to 3.5 eV) containing different electron-withdrawing groups of quinoline and naphthyridine are synthesized and used as the electron transporting materials. The different electron transporting and hole/exciton blocking properties of the silane derivatives are investigated via multilayered structure of organic electrophosphorescent devices by using fac-tris(2-phenylpyridine) iridium (Ir(ppy)(3)) as the phosphorescent emitter. 15.4% of maximum external quantum efficiency (EQE) corresponding to 56.2 cd A(-1) of maximum current efficiency is obtained with a maximum power efficiency of 58.9 lm W-1 by employing di-(4-(1,8-naphthyridin-2-yl) phenyl) diphenylsilane (DNPS) as the electron transporting material, combining with 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline as the hole blocking layer, which is higher than the performance of conventional Alq(3) device. When changing naphthyridine of DNPS to the electron-withdrawing group of quinoline (di-(4-(isoquinolin-4-yl)phenyl) diphenylsilane), only 11.4% of maximum EQE with 41.4 cd A(-1) of maximum current efficiency and 32.5 lm W-1 of a maximum power efficiency is obtained. These indicate that the electron transporting ability increases while the electron-withdrawing group changes from quinoline to naphthyridine, which is also consistent with the calculated reorganization energy.</style></abstract></record></records></xml>