Valence band variation in Si (110) nanowire induced by a covered insulator

Citation:

许洪华, 刘晓彦, 何毓辉, 樊春, 杜刚, 孙爱东, 韩汝琦, 康晋锋. Valence band variation in Si (110) nanowire induced by a covered insulator. 中国物理 B: 英文版. 2010:398–402.