许洪华, 刘晓彦, 何毓辉, 樊春, 杜刚, 孙爱东, 韩汝琦, 康晋锋. Valence band variation in Si (110) nanowire induced by a covered insulator. 中国物理 B: 英文版. 2010:398–402.

Xu H, Liu X, DU G, Zhao Y, He Y, Fan C, Han R, Kang J. Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si1-xGex Core–Shell Nanowire. Japanese Journal of Applied Physics. 2010;49:04DN01.

Xu H, Liu X, DU G, He Y, Fan C, Han R, Kang J. Influence of boundary force on the performance of gate-all-around Ge (110) NW FETs with HfO 2 gate insulator, in 2010 3rd International Nanoelectronics Conference (INEC). IEEE; 2010:179–180.

Hong-Hua X, Xiao-Yan L, Yu-Hui H, Chun F, Gang D, Ai-Dong S, Ru-Qi H, Jin-Feng K. Valence band variation in Si (110) nanowire induced by a covered insulator. Chinese Physics B. 2010;19:014601.