Influence of boundary force on the performance of gate-all-around Ge (110) NW FETs with HfO 2 gate insulator

Citation:

Xu H, Liu X, DU G, He Y, Fan C, Han R, Kang J. Influence of boundary force on the performance of gate-all-around Ge (110) NW FETs with HfO 2 gate insulator, in 2010 3rd International Nanoelectronics Conference (INEC). IEEE; 2010:179–180.