<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">许洪华</style></author><author><style face="normal" font="default" size="100%">刘晓彦</style></author><author><style face="normal" font="default" size="100%">何毓辉</style></author><author><style face="normal" font="default" size="100%">樊春</style></author><author><style face="normal" font="default" size="100%">杜刚</style></author><author><style face="normal" font="default" size="100%">孙爱东</style></author><author><style face="normal" font="default" size="100%">韩汝琦</style></author><author><style face="normal" font="default" size="100%">康晋锋</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Valence band variation in Si (110) nanowire induced by a covered insulator</style></title><secondary-title><style face="normal" font="default" size="100%">中国物理 B: 英文版</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2010</style></year></dates><number><style face="normal" font="default" size="100%">1</style></number><pages><style face="normal" font="default" size="100%">398–402</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>