Influence of Radial Stress on the Performance of Gate-All-Around Ge (110) NW FETs with HfO2 Dielectric

Citation:

Xu H, Liu X, DU G, He Y, Fan C, Han R, Kang J. Influence of Radial Stress on the Performance of Gate-All-Around Ge (110) NW FETs with HfO2 Dielectric. Journal of Nanoscience and Nanotechnology. 2011;11:10530–10534.