<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Xu, Honghua</style></author><author><style face="normal" font="default" size="100%">Liu, Xiaoyan</style></author><author><style face="normal" font="default" size="100%">Gang DU</style></author><author><style face="normal" font="default" size="100%">He, Yuhui</style></author><author><style face="normal" font="default" size="100%">Chun Fan</style></author><author><style face="normal" font="default" size="100%">Han, Ruqi</style></author><author><style face="normal" font="default" size="100%">Kang, Jinfeng</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Influence of Radial Stress on the Performance of Gate-All-Around Ge (110) NW FETs with HfO2 Dielectric</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Nanoscience and Nanotechnology</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2011</style></year></dates><number><style face="normal" font="default" size="100%">12</style></number><publisher><style face="normal" font="default" size="100%">American Scientific Publishers</style></publisher><volume><style face="normal" font="default" size="100%">11</style></volume><pages><style face="normal" font="default" size="100%">10530–10534</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>