On the morning of July 25th at 10 o'clock, Professor Wang Wen from the Hong Kong University of Science and Technology presented a report with the theme "Metal Oxide Thin Film Transformer: Technology, Modeling and Application to the Implementation of Intelligent Sensors". The lecture is hosted by Associate Professor Lu Yipeng from the School of Integrated Circuits, Peking University. In the report, Teacher Wang Wen introduced the low-temperature thin film transistor (TFT) technology based on metal oxide semiconductors, and discussed the oxidation and reduction kinetics models of intrinsic defects in metal oxide semiconductors and their applications in intelligent sensor implementation. Metal oxide thin film transistors (TFTs) are a novel semiconductor technology with broad application potential. In mainstream TFT technology, the use of metal oxides has many advantages over the use of hydrogenated amorphous silicon (a-Si: H) and low-temperature polycrystalline silicon (LTPS), such as high mobility, low leakage, the ability to achieve low-temperature processes and low-cost large-scale production, and flexibility. The report introduces the principle and preparation process of TFT technology, and emphasizes the potential of this technology to achieve electronic systems and single-chip integration on flexible substrates. This low-temperature technology also provides more possibilities for the manufacturing of electronic devices. At the end of the report, Teacher Wang summarized the importance and potential of metal oxide thin film transistor technology. He emphasized the application of this technology in the field of intelligent sensors and looked forward to possible future development directions. Through continued research and innovation, metal oxide thin film transistors are expected to bring more breakthroughs and applications in various fields.