Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si (110) and Si (111) substrates by plasma-assisted molecular beam epitaxy

Citation:

Shen XQ, Takahashi T, Rong X, Chen G, Wang XQ, Shen B, Matsuhata H, Ide T, Shimizu M. Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si (110) and Si (111) substrates by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 2013;103:231908.