Sviridov DE, Kozlovsky VI, Rong X, Chen G, Wang X, Jmerik VN, Kirilenko DA, Ivanov SV. Nanoscale visualization of electronic properties of AlxGa1-xN/AlyGa1-yN multiple quantum-well heterostructure by spreading resistance microscopy. Journal of Applied Physics. 2017;121:014305.

Wang P, Wang X, Wang T, Tan C-S, Sheng B, Sun X, Li M, Rong X, Zheng X, Chen Z, et al. Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods. Advanced Functional Materials. 2017;27:1604854.

Sun X, Wang X, Wang P, Sheng B, Li M, Su J, Zhang J, Liu F, Rong X, Xu F, et al. Identifying a doping type of semiconductor nanowires by photoassisted kelvin probe force microscopy as exemplified for GaN nanowires. Optical Materials Express. 2017;7:904–912.

Ma D, Rong X (co-first-author), Zheng X, Wang W, Wang P, Schulz T, Albrecht M, Metzner S, Müller M, August O, et al. Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy. Scientific Reports [Internet]. 2017;7:46420. DOI

荣新, 李顺峰, 葛惟昆. 第三代半导体 Ⅲ 族氮化物的物理与工程——从基础物理到产业发展的典范. 物理与工程 [Internet]. 2017;27:4–19. DOI