Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si (110) and Si (111) substrates by plasma-assisted molecular beam epitaxy - Shen, XQ; Takahashi, T.; Rong, X; G. Chen; Wang, XQ; B. Shen; Matsuhata, H; Ide, T; Shimizu, M (Applied Physics Letters, 2013)