A Novel Complementary Ferroelectric FET based Compressed Multibit Content Addressable Memory with High Area-and Energy-Efficiency

Citation:

Xu W, Luo J, Fu Z, Wang K, Huang Q, HUANG R. A Novel Complementary Ferroelectric FET based Compressed Multibit Content Addressable Memory with High Area-and Energy-Efficiency. 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2024:1-3.