Citation:Wang T, Wang X, Chen Z, Sun X, Wang P, Zheng X, Rong X, Yang L, Guo W, Wang D, et al. High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy. Advanced Science. 2018;5:1800844.ExportBibTex EndNote Tagged EndNote XML
