BACKGROUND: For many individuals, daily commuting activities on roadways account for a substantial proportion of total exposure, as well as peak-level exposures, to traffic-related air pollutants (TRAPS) including ultrafine particles, but the health impacts of these exposures are not well-understood. We sought to determine if exposure to TRAPs particles during commuting causes acute oxidative stress in the respiratory tract or changes in heart rate variability (HRV), a measure of autonomic activity. METHODS: We conducted a randomized, cross-over trial in which twenty-one young adults took two 1.5-hr rides in a passenger vehicle in morning rush-hour traffic. The subjects wore a powered-air-purifying respirator, and were blinded to high-efficiency particulate air (HEPA) filtration during one of the rides. At time points before and after the rides, we measured HRV and markers of oxidative stress in exhaled breath condensate (EBC) including nitrite, the sum of nitrite and nitrate, malondialdehyde, and 8-isoprostane. We used mixed linear models to evaluate the effect of exposure on EBC and HRV outcomes, adjusting for pre-exposure response levels. We used linear models to examine the effects of particle concentrations on EBC outcomes at post-exposure time points. RESULTS: Mean EBC nitrite and the sum of nitrite and nitrate were increased from baseline at immediately post-exposure comparing unfiltered to filtered rides (2.11 muM vs 1.70 muM, p = 0.02 and 19.1 muM vs 10.0 muM, p = 0.02, respectively). Mean EBC malondialdehyde (MDA) concentrations were about 10% greater following the unfiltered vs. filtered exposures, although this result was not statistically significant. We found no significant associations between exposure to traffic particles and HRV outcomes at any of the time points. At immediately post-exposure, an interquartile range increase in particle number concentration was associated with statistically significant increases in nitrite (99.4%, 95% CI 32.1% to 166.7%) and nitrite + nitrate (75.7%, 95% CI 21.5% to 130.0%). CONCLUSIONS: Increases in markers of oxidative stress in EBC may represent early biological responses to widespread exposures to TRAPs particles that affect passengers in vehicles on heavily trafficked roadways.
Nitrous acid (HONO), as a primary precursor of OH radicals, has been considered one of the most important nitrogen-containing species in the atmosphere. Up to 30% of primary OH radical production is attributed to the photolysis of HONO. However, the major HONO formation mechanisms are still under discussion. During the Campaigns of Air Quality Research in Beijing and Surrounding Region (CAREBeijing2006) campaign, comprehensive measurements were carried out in the megacity Beijing, where the chemical budget of HONO was fully constrained. The average diurnal HONO concentration varied from 0.33 to 1.2 ppbv. The net OH production rate from HONO, P (OH)(HONO)(net), was on average (from 05:00 to 19:00 h) 7.1 x 10(6) molecule/(cm(3) s), 2.7 times higher than from O-3 photolysis. This production rate demonstrates the important role of HONO in the atmospheric chemistry of megacity Beijing. An unknown HONO source (P (unknown)) with an average of 7.3 x 10(6) molecule/(cm(3) s) was derived from the budget analysis during daytime. P (unknown) provided four times more HONO than the reaction of NO with OH did. The diurnal variation of P (unknown) showed an apparent photo-enhanced feature with a maximum around 12:00 h, which was consistent with previous studies at forest and rural sites. Laboratory studies proposed new mechanisms to recruit NO2 and J(NO2) in order to explain a photo-enhancement of of P (unknown). In this study, these mechanisms were validated against the observation-constraint P (unknown). The reaction of exited NO2 accounted for only 6% of P (unknown), and P (unknown) poorly correlated with [NO2] (R = 0.26) and J(NO2)[NO2] (R = 0.35). These results challenged the role of NO2 as a major precursor of the missing HONO source.
Nitrous acid (HONO), as a primary precursor of OH radicals, has been considered one of the most important nitrogen-containing species in the atmosphere. Up to 30% of primary OH radical production is attributed to the photolysis of HONO. However, the major HONO formation mechanisms are still under discussion. During the Campaigns of Air Quality Research in Beijing and Surrounding Region (CAREBeijing2006) campaign, comprehensive measurements were carried out in the megacity Beijing, where the chemical budget of HONO was fully constrained. The average diurnal HONO concentration varied from 0.33 to 1.2 ppbv. The net OH production rate from HONO, P (OH)(HONO)(net), was on average (from 05:00 to 19:00 h) 7.1 x 10(6) molecule/(cm(3) s), 2.7 times higher than from O-3 photolysis. This production rate demonstrates the important role of HONO in the atmospheric chemistry of megacity Beijing. An unknown HONO source (P (unknown)) with an average of 7.3 x 10(6) molecule/(cm(3) s) was derived from the budget analysis during daytime. P (unknown) provided four times more HONO than the reaction of NO with OH did. The diurnal variation of P (unknown) showed an apparent photo-enhanced feature with a maximum around 12:00 h, which was consistent with previous studies at forest and rural sites. Laboratory studies proposed new mechanisms to recruit NO2 and J(NO2) in order to explain a photo-enhancement of of P (unknown). In this study, these mechanisms were validated against the observation-constraint P (unknown). The reaction of exited NO2 accounted for only 6% of P (unknown), and P (unknown) poorly correlated with [NO2] (R = 0.26) and J(NO2)[NO2] (R = 0.35). These results challenged the role of NO2 as a major precursor of the missing HONO source.
Nitrous acid (HONO), as a primary precursor of OH radicals, has been considered one of the most important nitrogen-containing species in the atmosphere. Up to 30% of primary OH radical production is attributed to the photolysis of HONO. However, the major HONO formation mechanisms are still under discussion. During the Campaigns of Air Quality Research in Beijing and Surrounding Region (CAREBeijing2006) campaign, comprehensive measurements were carried out in the megacity Beijing, where the chemical budget of HONO was fully constrained. The average diurnal HONO concentration varied from 0.33 to 1.2 ppbv. The net OH production rate from HONO, P (OH)(HONO)(net), was on average (from 05:00 to 19:00 h) 7.1 x 10(6) molecule/(cm(3) s), 2.7 times higher than from O-3 photolysis. This production rate demonstrates the important role of HONO in the atmospheric chemistry of megacity Beijing. An unknown HONO source (P (unknown)) with an average of 7.3 x 10(6) molecule/(cm(3) s) was derived from the budget analysis during daytime. P (unknown) provided four times more HONO than the reaction of NO with OH did. The diurnal variation of P (unknown) showed an apparent photo-enhanced feature with a maximum around 12:00 h, which was consistent with previous studies at forest and rural sites. Laboratory studies proposed new mechanisms to recruit NO2 and J(NO2) in order to explain a photo-enhancement of of P (unknown). In this study, these mechanisms were validated against the observation-constraint P (unknown). The reaction of exited NO2 accounted for only 6% of P (unknown), and P (unknown) poorly correlated with [NO2] (R = 0.26) and J(NO2)[NO2] (R = 0.35). These results challenged the role of NO2 as a major precursor of the missing HONO source.
Nitrous acid (HONO), as a primary precursor of OH radicals, has been considered one of the most important nitrogen-containing species in the atmosphere. Up to 30% of primary OH radical production is attributed to the photolysis of HONO. However, the major HONO formation mechanisms are still under discussion. During the Campaigns of Air Quality Research in Beijing and Surrounding Region (CAREBeijing2006) campaign, comprehensive measurements were carried out in the megacity Beijing, where the chemical budget of HONO was fully constrained. The average diurnal HONO concentration varied from 0.33 to 1.2 ppbv. The net OH production rate from HONO, P (OH)(HONO)(net), was on average (from 05:00 to 19:00 h) 7.1 x 10(6) molecule/(cm(3) s), 2.7 times higher than from O-3 photolysis. This production rate demonstrates the important role of HONO in the atmospheric chemistry of megacity Beijing. An unknown HONO source (P (unknown)) with an average of 7.3 x 10(6) molecule/(cm(3) s) was derived from the budget analysis during daytime. P (unknown) provided four times more HONO than the reaction of NO with OH did. The diurnal variation of P (unknown) showed an apparent photo-enhanced feature with a maximum around 12:00 h, which was consistent with previous studies at forest and rural sites. Laboratory studies proposed new mechanisms to recruit NO2 and J(NO2) in order to explain a photo-enhancement of of P (unknown). In this study, these mechanisms were validated against the observation-constraint P (unknown). The reaction of exited NO2 accounted for only 6% of P (unknown), and P (unknown) poorly correlated with [NO2] (R = 0.26) and J(NO2)[NO2] (R = 0.35). These results challenged the role of NO2 as a major precursor of the missing HONO source.
Eighty-seven soil samples collected from North China were analyzed for Dechlorane Plus (DP). The concentrations of DP ranged from not detectable (ND) to 12.21 ng/g with a mean of 0.55 ng/g. The mean concentrations of total DP and syn-DP in four regions of North China were in the following order: Jingjin (Beijing and Tianjin) > Shandong > Shanxi > Hebei, while the mean concentrations of anti-DP in the four regions were in a different order: Shandong > Jingjin > Shanxi > Hebei. The mean f (syn) values for Jingjin (0.27), Hebei (0.24), and Shanxi (0.24) were close to 0.25, while the mean f (syn) value for Shandong (0.31) was closer to 0.35. In addition, the f (syn) value for Shandong was significantly higher (P < 0.01) than those of the other regions (Jingjin, Heibei, and Shanxi), indicating specific sources of DP. Syn-DP displayed a strong linear relationship with anti-DP (R (2) = 0.74), indicating that no obvious stereoselective process occurred in the soil of North China. Ordinary kriging was undertaken to map the spatial patterns of DP. High concentrations of DP in soils were present in south of Shanxi, central Hebei, south of Tianjin, and the south and northeast of Shandong, which were suggested to be connected with human activities such as e-waste dismantling.
alpha-Pinene/NOx and alpha-pinene/HONO photooxidation experiments at varying humidity were conducted in smog chambers in the presence or absence of FeSO4 seed particles. FeSO4 seed particles decrease SOA mass as long as water was present on the seed particle surface, but FeSO4 seed particles have no decreasing effect on SOA under dryer conditions at 12% relative humidity (RH). The decreasing effect of FeSO4 seed particles on the SOA mass is proposed to be related to oxidation processes in the surface layer of water on the seed particles. Free radicals, including OH, can be formed from catalytic cycling of Fe2+ and Fe3+ in the aqueous phase. These radicals can react further with the organic products of alpha-pinene oxidation on the seed particles. The oxidation may lead to formation of smaller molecules which have higher saturation vapor pressures and favor repartitioning to the gas phase, and therefore, reduces SOA mass. (C) 2014 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/).
Based on our proposed self-terminating gate recess etching technique, normally-off recess-gated AlGaN/GaN MOSFET has been demonstrated with a novel method using GaN cap layer (CL) as recess mask, which, as a result, simplifies the device fabrication process and lowers the fabrication cost. The GaN CL is capable of acting as an effective recess mask for the gate recess process, which includes a thermal oxidation for 45 min at 650 degrees C followed by 4-min etching in potassium hydroxide (KOH) at 70 degrees C. After gate recess process, no obvious change is observed in terms of the surface morphology of the GaN CL, the contact resistance of the Ohmic contact formed directly on the GaN CL as well as the sheet resistance of the two-dimensional electron gas (2-DEG) channel layer under the GaN CL. The fabricated device exhibits a threshold voltage (V-th) as high as 5 V, a maximum drain current (I-dmax) of similar to 200 mA/mm, a high ON/OFF current ratio of similar to 10(10) together with a low forward gate leakage current of similar to 10(-5) mA/mm. Meanwhile, the OFF-state breakdown voltage (V-br) of the device with gate-drain distance of 6 mu m is 450 V.