科研成果 by Type: Conference Paper

2009
Liu X, Zhao D, Zhang Y, Ma S, Huang Q, Gao W. Joint learning for side information and correlation model based on linear regression model in distributed video coding, in Proceedings of the International Conference on Image Processing, ICIP 2009, 7-10 November 2009, Cairo, Egypt.; 2009:2937–2940. 访问链接
Liu Y, Li R, Chen K, Yuan Y, Huang L, Yu H. KIDGS: A geographical knowledge-informed digital gazetteer service, in 2009 17th International Conference on Geoinformatics, Geoinformatics 2009.; 2009. 访问链接
Liu X, Zhang Y, Li Y, Liu H, Ma S, Zhao D. Local adaptive learning and fusion for side information interpolation in distributed video coding, in 2009 Picture Coding Symposium, PCS 2009, Chicago, IL, USA, May 6-8, 2009.; 2009:1–4. 访问链接
Qu TS, Song Y, Li XD, Wu XH. A Measurement of Structural Head-related Transfer Functions in Proximal Region, in The 10th Western Pacific Acoustics Conference. Beijing China; 2009.
Li Y, Ma S, Zhao D, Gao W. Modeling Correlation Noise Statistics at Decoder for Multi-view Distributed Video Coding, in International Symposium on Circuits and Systems (ISCAS 2009), 24-17 May 2009, Taipei, Taiwan.; 2009:2597–2600. 访问链接
Li Y, Liu H, Liu X, Ma S, Zhao D, Gao W. Multi-hypothesis based multi-view distributed video coding, in 2009 Picture Coding Symposium, PCS 2009, Chicago, IL, USA, May 6-8, 2009.; 2009:1–4. 访问链接
Zhang X, Ma S, Zhang Y, Zhang L, Gao W. Nonlocal Edge-Directed Interpolation, in Advances in Multimedia Information Processing - PCM 2009, 10th Pacific Rim Conference on Multimedia, Bangkok, Thailand, December 15-18, 2009 Proceedings.; 2009:1197–1207. 访问链接
Liang L, Chen J, Ma S, Zhao D, Gao W. A no-reference perceptual blur metric using histogram of gradient profile sharpness, in Proceedings of the International Conference on Image Processing, ICIP 2009, 7-10 November 2009, Cairo, Egypt.; 2009:4369–4372. 访问链接
Xu H, He Y, Zhao Y, DU G, Kang J, Han R, Liu X, Fan C. Radial boundary forces-modulated valence band structure of Ge (110) nanowire, in 2009 13th International Workshop on Computational Electronics. IEEE; 2009:1–4.
Yang L, Zhang L, Ma S, Zhao D. A ROI quality adjustable rate control scheme for low bitrate video coding, in 2009 Picture Coding Symposium, PCS 2009, Chicago, IL, USA, May 6-8, 2009.; 2009:1–4. 访问链接
Zhang N, Ma S, Gao W. Shape-Based Depth Map Coding, in Fifth International Conference on Intelligent Information Hiding and Multimedia Signal Processing (IIH-MSP 2009), Kyoto, Japan, 12-14 September, 2009, Proceedings.; 2009:316–319. 访问链接
Qi L, Zhang Y, Liu Y, Gao Y, Song L. Spatial distribution of the inlinks to the Beijing tourist attractions' websites, in 2009 17th International Conference on Geoinformatics, Geoinformatics 2009.; 2009. 访问链接
Yuan L, Wang M, Chen KJ. On the stability of fluorine ions in AlGaN/GaN heterostructures: a molecular dynamics simulation study, in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2.Vol 6.; 2009:S944-S947.Abstract
Fluorine ions can be effectively incorporated into AlGaN/GaN high electron mobility transistor (HEMT) structures, enabling the modulation of local potential and carrier density. The physical mechanism of fluorine incorporation in AlGaN/GaN heterojunctions is of fundamental importance to the stability of fluorine ions in AlGaN/GaN HEMTs. In this work, the molecular dynamic (MD) simulation method is used to calculate the potential energies of interstitial and substitutional fluorine atoms in AlGaN/GaN material system. Ziegler-Biersack-Littmark (ZBL), Lindhard-Sorensen (L-S) and Coulomb potential functions are applied in the MD simulation. The geometric lattice structures, spontaneous and piezoelectric polarizations, and temperature dependence are also included in the simulation. The activation energies associated with interstitial-substitutional and interstitial-interstitial diffusions are obtained. It is revealed that the fluorine ions are most likely located at the substitutional group-III cation sites S(III) and the diffusion of fluorine ions should be dominated by S(III)-interstitial process which exhibits an activation energy of 1.1 eV in Al(0.25)Ga(0.75)N and 1.4 eV in GaN in the presence of group-III vacancies. It is expected that the removal of group-III vacancies can significantly suppress the fluorine diffusion, which in turn, leads to excellent fluorine stability in III-nitride materials. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Wang M, Yuan L, Xu F, Shen B, Chen KJ. Study of diffusion and thermal stability of fluorine ions in GaN by Time-of-Flight Secondary Ion Mass Spectroscopy, in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2.Vol 6.; 2009:S952-S955.Abstract
The diffusion properties of fluorine ions in GaN are investigated by means of Time-of-Flight secondary ion mass spectroscopy. Instead of incorporating fluorine ions close to the sample surface by plasma, fluorine ion implantation with an energy of 180 keV is utilized to implant fluorine ions deep into the GaN bulk, preventing the surface effects from affecting the data analysis. It is found that the diffusion of fluorine-ions in GaN is a dynamic process, featuring a two-step process. A defect-assisted diffusion model is proposed to account for the experimental observations. Fluorine ions tend to occupy Ga vacancies induced by fluorine ion implantation and diffuse to vacancy rich regions. The fluorine ions become stable after continuous vacancy chains are significantly reduced or removed by thermal annealing. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Liu H, Li Y, Liu X, Ma S, Zhao D, Gao W. Two-pass reconstruction in distributed video coding, in 2009 Picture Coding Symposium, PCS 2009, Chicago, IL, USA, May 6-8, 2009.; 2009:1–4. 访问链接
2008
Yuan L, Wang M, Chen KJ. Atomistic Modeling of Fluorine Implantation and Diffusion in III-Nitride Semiconductors, in IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST. IEEE Electron Devices Soc; 2008:543-546.Abstract
A hybrid molecular dynamics (MD)/kinetic Monte Carlo (KMC) model is developed for atomistic modeling of fluorine ion implantation and diffusion in AlGaN/GaN heterostructures. The MD simulation reveals the F distribution profiles and the corresponding defect profiles, and most importantly, the potential energies of fluorine ions in the III-nitride material system. Using the results from the MD simulation, the diffusion process is simulated with KMC method, and the modeling results are validated by the secondary-ion-mass-spectrum (SIMS) measurement. The surface effect on the fluorine's stability and its improvement by passivation are also successfully modeled.
He Y, Fan C, Zhao Y, Kang J, Liu X, Han R. Band structure calculations of Ge-Si core-shell nanowires, in 2008 IEEE Silicon Nanoelectronics Workshop. IEEE; 2008:1–2.
Jia J. A case study of AI application on language instruction: CSIEC, in Proceedings of the National Conference on Artificial Intelligence.Vol 3.; 2008:1624-1631. 访问链接
Qu T, Xiao Z, Gong M, Huang Y, Li X, Wu X. Distance dependent head-related transfer function database of KEMAR, in International Conference on Audio, Language and Image Processing.; 2008.
Chen J, Qu TS, Wu XH, Huang Q, Huang Y, Li L, Chi HS. Frequency importance function of Mandarin Chinese Speech, in The Journal of the Acoustical Society of America.; 2008.

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