Experimental and simulation I–V characteristics of the cap gate high electron mobility transistor (HEMT) are reported. The two-dimensional simulations results are in conformity with the realistic HEMT perfectly, indicating reliable and acceptable of the TCAD simulation method in GaN-based devices. Depending on this, further researches on the cap gate HEMT are carried out by TCAD software, which analyzes the impact of recessed depth of gate barrier, the dimension of LG and cap gate structure on GaN HEMT performances.
Yang T, Gong J, Zhang H, Zou L, Shi L, Li X. HeavyGuardian: Separate and Guard Hot Items in Data Streams, in Proceedings of the 24th ACM SIGKDD International Conference on Knowledge Discovery & Data Mining, KDD 2018, London, UK, August 19-23, 2018.; 2018:2584–2593. link