王宗巍, 鲍霖, 蔡一茂, 凌尧天, 黄如.; 2021. 一种可调随机振荡器及应用. China patent CN 202111142701.5.

王宗巍, 鲍霖, 蔡一茂, 黄如.; 2021. 一种基于阻变存储器的实现可调随机随机数序列方法. China patent CN 202111404135.0.

王宗巍, 鲍霖, 蔡一茂, 凌尧天, 杨韵帆, 单林波, 鲍盛誉, 黄如.; 2021. 一种跨导可变场效应晶体管阵列及应用. China patent CN 202111208889.9.

Wu L, Bao L, Wang Z, Yu Z, Wang B, Chen Q, Ling Y, Qin Y, Tang K, Cai Y, et al. Emulation of Synaptic Scaling Based on MoS2 Neuristor for Self-Adaptative Neuromorphic Computing. Advanced Electronic Materials. 2021:2001104.

Cai Y, Wang Z, Yu Z, Ling Y, Chen Q, Yang Y, Bao S, Wu L, Bao L, WANG R, et al. Technology-Array-Algorithm Co-Optimization of RRAM for Storage and Neuromorphic Computing: Device Non-idealities and Thermal Cross-talk, in 2020 IEEE International Electron Devices Meeting (IEDM). IEEE; 2020:13–4.

Bao L, Wang Z, Yu Z, Fang Y, Yang Y, Cai Y, HUANG R. Adaptive Random Number Generator Based on RRAM Intrinsic Fluctuation for Reinforcement Learning, in 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA). IEEE; 2020:64–65.

Wu L, Wang Z, Wang B, Chen Q, Bao L, Yu Z, Yang Y, Ling Y, Qin Y, Tang K, et al. Emulation of Biphasic Plasticity in Retinal Electrical Synapse for Light-Adaptive Pattern Pre-Processing. Nanoscale. 2020.

Chen Q, Wang Z, Lin M, Qi X, Yu Z, Wu L, Bao L, Ling Y, Qin Y, Cai Y, et al. Homogeneous 3D Vertical Integration of Parylene-C Based Organic Flexible Resistive Memory on Standard CMOS Platform. Advanced Electronic Materials. 2020:2000864.

Bao L, Wang Z, Yu Z, Ling Y, Cai Y, HUANG R. Rotational Pattern Recognition by Spiking Correlated Neural Network Based on Dual-Gated MoS2 Neuristor. Advanced Intelligent Systems. 2020;2:2000102.

Wang Z, Zheng Q, Kang J, Yu Z, Zhong G, Ling Y, Bao L, Bao S, Bai G, Zheng S, et al. Self-activation neural network based on self-selective memory device with rectified multilevel states. IEEE Transactions on Electron Devices. 2020;67:4166–4171.

Bao L, Wang Z, Wang B, Liu K, Bai G, Yu Z, Kang J, Ling Y, Wu L, Chen Q, et al. Tunable Stochastic Oscillator Based on Hybrid VO2/TaOx Device for Compressed Sensing. IEEE Electron Device Letters. 2020;42:102–105.

Li X, Yu B, Wang B, Bao L, Zhang B, Li H, Yu Z, Zhang T, Yang Y, HUANG R, et al. Multi-terminal ionic-gated low-power silicon nanowire synaptic transistors with dendritic functions for neuromorphic systems. Nanoscale. 2020;12:16348–16358.

Wang Z, Kang J, Bai G, Zhong G, Wang B, Yu Z, Ling Y, Chen Q, Bao L, Wu L, et al. Self-Selective Resistive Device with Hybrid Switching Mode for Passive Crossbar Memory Application. IEEE Electron Device Letters. 2020;41:1009–1012.

蔡一茂, 康健, 王宗巍, 凌尧天, 喻志臻, 陈青钰, 鲍霖, 吴林东, 黄如.; 2019. 一种双向阈值开关选择器件及其制备方法. China patent CN 201910924689.X.

王宗巍, 蔡一茂, 康健, 鲍盛誉, 凌尧天, 喻至臻, 陈青钰, 鲍霖, 吴林东, 黄如.; 2019. 一种双模阻变存储器件及其制备方法. China patent CN 201910903216.1.

蔡一茂, 凌尧天, 王宗巍, 郑琪霖, 喻志臻, 鲍霖, 吴林东, 黄如.; 2019. 一种基于铁电存储器的神经网络电路及其控制方法. China patent CN 201910753677.5.

王宗巍, 蔡一茂, 凌尧天, 郑琪霖, 鲍盛誉, 喻志臻, 陈青钰, 鲍霖, 吴林东, 黄如.; 2019. 一种铁电电容耦合神经网络电路结构及神经网络中向量与矩阵的乘法运算方法. China patent CN 201910822008.9.

Bao L, Zhu J, Yu Z, Jia R, Cai Q, Wang Z, Xu L, Wu Y, Yang Y, Cai Y, et al. Dual-Gated MoS2 Neuristor for Neuromorphic Computing. ACS applied materials & interfaces. 2019;11:41482–41489.

Dang B, Sun J, Zhang T, Wang S, Zhao M, Liu K, Xu L, Zhu J, Cheng C, Bao L, et al. Physically transient true random number generators based on paired threshold switches enabling monte carlo method applications. IEEE Electron Device Letters. 2019;40:1096–1099.

Wang B, Wang Z, Fang Y, Chen Q, Bao L, Yang Y, Cai Y, HUANG R. Actually Mimicking of Neuron Action Potential by A Single RRAM Device, in 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE; 2018:1–3.