Media Report:
《北京大学新闻网》and《芯思想》review the achievements of the School of Integrated Circuits in International Electron Device Meeting (IEDM), 2023. Our group’s works are highlighted.
Read More: https://news.pku.edu.cn/mtbdnew/fbbd29711f644480b21a3f88cff1856f.htm
Read More: https://mp.weixin.qq.com/s/qCo5o791tBTEvmy18T91-Q
Media Report:
Semiconductor Today publishes a news story about Dr. Wei’s group’s work on 650-V GaN-on-Si power integrated circuits with high-side and low-side transistors. The cross-talk effect between the transistors are eliminated using a virtual body concept. The work was originally published on International Electron Device Meeting (IEDM), 2023.
Read More: https://semiconductor-today.com/news_items/2024/jan/peking-110124.shtml
Media Report:
News story about Dr. Wei’s group’s work on 6500-V E-mode GaN power transistor with ultralow dynamic on-resistance. The work was published on International Electron Device Meeting (IEDM), 2023, and sets a new record for dynamic on-resistance of high-voltage GaN power transistors.
Read More: https://www.mittrchina.com/news/detail/12843
Read More: https://mp.weixin.qq.com/s/hW-9dZWDAe5FDKebTWaW9Q
Read More: https://www.sohu.com/a/749990332_354973
Media Report:
《北京大学集成电路学院公众号》publishes a news story about Dr. Wei’s group’s three papers on IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023. The three papers cover an E-mode active-passivation GaN transistor, an E-mode GaN-on-sapphire power transistor, a GaN power transistor with suppressed buffer trapping.
Read More: https://mp.weixin.qq.com/s/3dL6HpYmeMYLu2EdrtPV0A
Media Report:
Dr. Wei's work on p-channel GaN transistor has been reported in Semiconductor Today (vol. 15, no. 1, pp. 62-63, Feb. 2020). This work has experimentally demonstrated a method to realize high-performance E-mode p-channel GaN transistor. The work was published on IEEE Electron Device Letters. Dr. Jin Wei and Prof. Kevin J. Chen from the Hong Kong University of Science and Technology are corresponding authors of the paper.
Read More: http://www.semiconductor-today.com/news_items/2020/feb/hkust-060220.shtml
Media Report:
Dr. Wei's work on a novel vertical power transistor has been reported in Semiconductor Today (vol. 11, no. 5, pp. 96-98, Jun./Jul. 2016). This work proposes a novel method to combine the benefits of SiC and GaN into one single device. The work was published on IEEE Transactions on Electron Devices. Dr. Wei is the first author of the paper.
Read More: http://www.semiconductor-today.com/news_items/2016/jun/hkust_140616.shtml