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科研成果

2014
Bai P, Kao J, Chen J-H, Mickelson W, Zettl A, Xu T. Nanostructures on graphene using supramolecule and supramolecular nanocomposites. Nanoscale. 2014;(9):4503-4507. SCI被引用次数：5.
2013
Gibb AL, Alem N, Chen J-H, Erickson KJ, Ciston J, Gautam A, Linck M, Zettl A. Atomic resolution imaging of grain boundary defects in monolayer chemical vapor deposition-grown hexagonal boron nitride. Journal of the American Chemical Society [Internet]. 2013;(18):6758-6761. 访问链接 SCI被引用次数：192.
Hellerstedt J, Chen JH, Kim D, Cullen WG, Zheng CX, Fuhrer MS. In situ monitoring of resistivity and carrier concentration during molecular beam epitaxy of topological insulator Bi2Se3. Proceedings of SPIE - The International Society for Optical Engineering. 2013. SCI被引用次数：1.
2012
Chen J-H, Li L, Cullen WG, Williams ED, Fuhrer MS. Reply. Nature Physics. 2012;(5):353-. SCI被引用次数：14.
2011
Chen J-H, Li L, Cullen WG, Williams ED, Fuhrer MS. Tunable Kondo effect in graphene with defects. Nature Physics. 2011;(7):535-538. SCI被引用次数：291.
2010
Xiao S, Chen J-H, Adam S, Williams ED, Fuhrer MS. Charged impurity scattering in bilayer graphene. Physical Review B - Condensed Matter and Materials Physics. 2010;(4).
Cullen WG, Yamamoto M, Burson KM, Chen JH, Jang C, Li L, Fuhrer MS, Williams ED. High-fidelity conformation of graphene to SiO2 topographic features. Physical Review Letters. 2010;(21). SCI被引用次数：114.
Katoch J, Chen J-H, Tsuchikawa R, Smith CW, Mucciolo ER, Ishigami M. Uncovering the dominant scatterer in graphene sheets on SiO2. Physical Review B - Condensed Matter and Materials Physics. 2010;(8). SCI被引用次数：45.
2009
Chen J-H, Cullen WG, Jang C, Fuhrer MS, Williams ED. Defect scattering in graphene. Physical Review Letters. 2009;(23). SCI被引用次数：479.
Chen J-H, Jang C, Ishigami M, Xiao S, Cullen WG, Williams ED, Fuhrer MS. Diffusive charge transport in graphene on SiO2. Solid State Communications. 2009;(27-28):1080-1086. SCI被引用次数：86.
Fuhrer MS, Chen J-H, Jang C, Cho S, Xiao S, Ishigami M, Cullen WG, Williams ED. Scattering mechanisms in graphene. Device Research Conference - Conference Digest, DRC. 2009:193-.
2008
Jang C, Adam S, Chen J-H, Williams ED, Sarma DS, Fuhrer MS. Tuning the effective fine structure constant in graphene: Opposing effects of dielectric screening on short- and long-range potential scattering. Physical Review Letters. 2008;(14). SCI被引用次数：303.
Chen J-H, Jang C, Adam S, Fuhrer MS, Williams ED, Ishigami M. Charged-impurity scattering in graphene. Nature Physics. 2008;(5):377-381. SCI被引用次数：1169.
Chen J-H, Jang C, Xiao S, Ishigami M, Fuhrer MS. Intrinsic and extrinsic performance limits of graphene devices on SiO 2. Nature Nanotechnology [Internet]. 2008;(4):206-209. 访问链接 SCI被引用次数：2364.
2007
Ishigami M, Chen JH, Cullen WG, Fuhrer MS, Williams ED. Atomic structure of graphene on SiO 2. Nano Letters [Internet]. 2007;(6):1643-1648. 访问链接 SCI被引用次数：1286.
Hines DR, Southard AE, Sangwan V, Chen J-H, Fuhrer MS, Williams ED. Organic and carbon-based electronics printed onto flexible substrates. 2007 International Semiconductor Device Research Symposium, ISDRS. 2007.
Chen J-H, Ishigami M, Jang C, Hines DR, Fuhrer MS, Williams ED. Printed graphene circuits. Advanced Materials. 2007;(21):3623-3627. SCI被引用次数：199.
Hines DR, Southard AE, Tunnell A, Sangwan V, Moore T, Chen J-H, Fuhrer MS, Williams ED. Transfer printing as a method for fabricating hybrid devices on flexible substrates. Proceedings of SPIE - The International Society for Optical Engineering. 2007. SCI被引用次数：5.
2006
Ishigami M, Chen JH, Williams ED, Tobias D, Chen YF, Fuhrer MS. Hooge's constant for carbon nanotube field effect transistors. Applied Physics Letters. 2006;(20). SCI被引用次数：85.