Citation:
Xie, J. ; Shi, K. ; Cai, K. ; Zhang, D. ; Wang, J. Y. ; Pei, J. *; Zhao, D. *. A Nir Dye with High-Performance N-Type Semiconducting Properties. Chem. Sci. 2016, 7, 499-504.
摘要:
A novel hetero-polycyclic aromatic compound manifesting strong near-infrared (NIR) absorption as well as high-performance n-type semiconducting properties is developed. With an exceptionally low LUMO level at -4.7 eV, this NIR dye (lambda(max) approximate to 1100 nm, epsilon approximate to 105 mol(-1) L cm(-1)) exhibits adequate stability under ambient conditions, with electron mobility up to 0.96 cm(2) V-1 s(-1) measured in solution-processed organic field-effect transistors. A special metal-free C-C coupling serves as a pivotal step in constructing the polycyclic pi-framework of this low-bandgap chromophore, by fusing an electron-deficient naphthalenediimide moiety with an electron-donating naphthalenediamine. Such a rare combination of extraordinary optical and semiconductive attributes is quite valuable for organic small molecules, and promising for unique applications in the opto-electronic field.See also: 2016