Bioorthogonal chemistry capable of operating in live animals is needed to investigate biological processes such as cell death and immunity. Recent studies have identified a gasdermin family of pore-forming proteins that executes inflammasome-dependent and -independent pyroptosis1,2,3,4,5. Pyroptosis is proinflammatory, but its effect on antitumour immunity is unknown. Here we establish a bioorthogonal chemical system, in which a cancer-imaging probe phenylalanine trifluoroborate (Phe-BF3) that can enter cells desilylates and ‘cleaves’ a designed linker that contains a silyl ether. This system enabled the controlled release of a drug from an antibody–drug conjugate in mice. When combined with nanoparticle-mediated delivery, desilylation catalysed by Phe-BF3 could release a client protein—including an active gasdermin—from a nanoparticle conjugate, selectively into tumour cells in mice. We applied this bioorthogonal system to gasdermin, which revealed that pyroptosis of less than 15% of tumour cells was sufficient to clear the entire 4T1 mammary tumour graft. The tumour regression was absent in immune-deficient mice or upon T cell depletion, and was correlated with augmented antitumour immune responses. The injection of a reduced, ineffective dose of nanoparticle-conjugated gasdermin along with Phe-BF3 sensitized 4T1 tumours to anti-PD1 therapy. Our bioorthogonal system based on Phe-BF3 desilylation is therefore a powerful tool for chemical biology; our application of this system suggests that pyroptosis-induced inflammation triggers robust antitumour immunity and can synergize with checkpoint blockade.

Two-dimensional (2D) semiconductors hold great promise in flexible electronics because of their intrinsic flexibility and high electrical performance. However, the lack of facile synthetic and subsequent device fabrication approaches of high-mobility 2D semiconducting thin films still hinders their practical applications. Here, we developed a facile, rapid, and scalable solution-assisted method for the synthesis of a high-mobility semiconducting oxyselenide (Bi2O2Se) thin film by the selenization and decomposition of a precursor solution of Bi(NO3)3·5H2O. Simply by changing the rotation speed in spin-coating of the precursor solution, the thicknesses of Bi2O2Se thin films can be precisely controlled down to few atomic layers. The as-synthesized Bi2O2Se thin film exhibited a high Hall mobility of ∼74 cm2 V–1 s–1 at room temperature, which is much superior to other 2D thin-film semiconductors such as transition metal dichalcogenides. Remarkably, flexible top-gated Bi2O2Se transistors showed excellent electrical stability under repeated electrical measurements on flat and bent substrates. Furthermore, Bi2O2Se transistor devices on muscovite substrates can be readily transferred onto flexible polyvinyl chloride (PVC) substrates with the help of thermal release tape. The integration of a high-mobility thin-film semiconductor, excellent stability, and easy transfer onto flexible substrates make Bi2O2Se a competitive candidate for future flexible electronics.