Wu Y, Ye PD. Scaling of InGaAs MOSFETs into deep-submicron. In: Srinivasan P, Obeng Y, Misra D, Karim Z, DeGendt S Graphene, Ge/Iii-V, and Emerging Materials for Post-Cmos Applications 2. Vol. 28. ; 2010. pp. 185-201. 访问链接
Liu J, Cole MJ, Liu C, Bierig R, Gwizdka J, Belkin NJ, Zhang J, Zhang X. Search behaviors in different task types, in Proceedings of the 10th annual joint conference on Digital libraries.; 2010:69–78.
Nuclear shape coexistence and shape change induced by 1 g 9 / 2 orbitals have been investigated using configuration-constrained potential-energy-surface and Total-Routhian-Surface calculations. Oblate isomeric states and shape-coexisting rotational bands are found and compared with available experimental data. The effects of the 1 g 9 / 2 orbitals on nuclear structure are discussed.