Citation:
Fu XW, Jacopin G, Shahmohammadi M, Liu R, Benameur M, Ganiere JD, Feng J, Guo WL, Liao ZM, Deveaud B, et al. Exciton Drift in Semiconductors under Uniform Strain Gradients: Application to Bent ZnO Microwires. Acs Nano [Internet]. 2014;8:3412-3420.