Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction

Citation:

Zeng Z, Morgan TA, Fan D, Li C, Hirono Y, Hu X, Zhao Y, Lee JS, Wang J, Wang ZM, et al. Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction. AIP Advances. 2013;(7).