<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Xuehan Zhou</style></author><author><style face="normal" font="default" size="100%">Yan Liang</style></author><author><style face="normal" font="default" size="100%">Huixia Fu</style></author><author><style face="normal" font="default" size="100%">Ruixue Zhu</style></author><author><style face="normal" font="default" size="100%">Jingyue Wang</style></author><author><style face="normal" font="default" size="100%">Xuzhong Cong</style></author><author><style face="normal" font="default" size="100%">Tan, Congwei</style></author><author><style face="normal" font="default" size="100%">Congcong Zhang</style></author><author><style face="normal" font="default" size="100%">Yichi Zhang</style></author><author><style face="normal" font="default" size="100%">Yani Wang</style></author><author><style face="normal" font="default" size="100%">Qijia Xu</style></author><author><style face="normal" font="default" size="100%">Peng Gao</style></author><author><style face="normal" font="default" size="100%">Hailin Peng</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Step-climbing epitaxy of layered materials with giant out-of-plane lattice mismatch</style></title><secondary-title><style face="normal" font="default" size="100%">Adv. Mater.</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2022</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://onlinelibrary.wiley.com/doi/10.1002/adma.202202754</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">2202754</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Heteroepitaxy with large lattice mismatch remains a great challenge for high-quality epifilm growth. Although great efforts have been devoted to epifilm growth with an in-plane lattice mismatch, the epitaxy of 2D layered crystals on stepped substrates with a giant out-of-plane lattice mismatch is seldom reported. Here, taking the molecular-beam epitaxy of 2D semiconducting Bi2O2Se on 3D SrTiO3 substrates as an example, a step-climbing epitaxy growth strategy is proposed, in which the n-th (n = 1, 2, 3…) epilayer climbs the step with height difference from out-of-plane lattice mismatch and continues to grow the n+1-th epilayer. Step-climbing epitaxy can spontaneously relax and release the strain from the out-of-plane lattice mismatch, which ensures the high quality of large-area epitaxial films. Wafer-scale uniform 2D Bi2O2Se single-crystal films with controllable thickness can be obtained via step-climbing epitaxy. Most notably, one-unit-cell Bi2O2Se films (1.2 nm thick) exhibit a high Hall mobility of 180 cm2 V−1 s−1 at room temperature, which exceeds that of silicon and other 2D semiconductors with comparable thickness. As an out-of-plane lattice mismatch is generally present in the epitaxy of layered materials, the step-climbing epitaxy strategy expands the existing epitaxial growth theory and provides guidance toward the high-quality synthesis of layered materials.</style></abstract></record></records></xml>