<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Congcong Zhang</style></author><author><style face="normal" font="default" size="100%">Jinxiong Wu</style></author><author><style face="normal" font="default" size="100%">Yuanwei Sun</style></author><author><style face="normal" font="default" size="100%">Tan, Congwei</style></author><author><style face="normal" font="default" size="100%">Tianran Li</style></author><author><style face="normal" font="default" size="100%">Teng Tu</style></author><author><style face="normal" font="default" size="100%">Yichi Zhang</style></author><author><style face="normal" font="default" size="100%">Yan Liang</style></author><author><style face="normal" font="default" size="100%">Xuehan Zhou</style></author><author><style face="normal" font="default" size="100%">Peng Gao</style></author><author><style face="normal" font="default" size="100%">Hailin Peng</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">High-mobility flexible oxyselenide thin-film transistors prepared by a solution-assisted method</style></title><secondary-title><style face="normal" font="default" size="100%">J. Am. Chem. Soc.</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2020</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://pubs.acs.org/doi/10.1021/jacs.9b11668</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">142</style></volume><pages><style face="normal" font="default" size="100%">2726–2731</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Two-dimensional (2D) semiconductors hold great promise in&amp;nbsp;flexible&amp;nbsp;electronics because of their intrinsic&amp;nbsp;flexibility&amp;nbsp;and&amp;nbsp;high&amp;nbsp;electrical performance. However, the lack of facile synthetic and subsequent device fabrication approaches of&amp;nbsp;high-mobility&amp;nbsp;2D semiconducting&amp;nbsp;thin&amp;nbsp;films&amp;nbsp;still hinders their practical applications. Here, we developed a facile, rapid, and scalable&amp;nbsp;solution-assisted&amp;nbsp;method&amp;nbsp;for the synthesis of a&amp;nbsp;high-mobility&amp;nbsp;semiconducting&amp;nbsp;oxyselenide&amp;nbsp;(Bi2O2Se)&amp;nbsp;thin&amp;nbsp;film&amp;nbsp;by the selenization and decomposition of a precursor&amp;nbsp;solution&amp;nbsp;of Bi(NO3)3·5H2O. Simply by changing the rotation speed in spin-coating of the precursor&amp;nbsp;solution, the thicknesses of Bi2O2Se&amp;nbsp;thin&amp;nbsp;films&amp;nbsp;can be precisely controlled down to few atomic layers. The as-synthesized Bi2O2Se&amp;nbsp;thin&amp;nbsp;film&amp;nbsp;exhibited a&amp;nbsp;high&amp;nbsp;Hall&amp;nbsp;mobility&amp;nbsp;of ∼74 cm2&amp;nbsp;V–1&amp;nbsp;s–1&amp;nbsp;at room temperature, which is much superior to other 2D&amp;nbsp;thin-film&amp;nbsp;semiconductors such as transition metal dichalcogenides. Remarkably,&amp;nbsp;flexible&amp;nbsp;top-gated Bi2O2Se&amp;nbsp;transistors&amp;nbsp;showed excellent electrical stability under repeated electrical measurements on flat and bent substrates. Furthermore, Bi2O2Se&amp;nbsp;transistor&amp;nbsp;devices on muscovite substrates can be readily transferred onto&amp;nbsp;flexible&amp;nbsp;polyvinyl chloride (PVC) substrates with the help of thermal release tape. The integration of a&amp;nbsp;high-mobility&amp;nbsp;thin-film&amp;nbsp;semiconductor, excellent stability, and easy transfer onto&amp;nbsp;flexible&amp;nbsp;substrates make Bi2O2Se a competitive candidate for future&amp;nbsp;flexible&amp;nbsp;electronics.</style></abstract><issue><style face="normal" font="default" size="100%">6</style></issue></record></records></xml>