@article {31030,
	title = {Step-climbing epitaxy of layered materials with giant out-of-plane lattice mismatch},
	journal = {Adv. Mater.},
	volume = {2202754},
	year = {2022},
	abstract = {Heteroepitaxy with large lattice mismatch remains a great challenge for high-quality epifilm growth. Although great efforts have been devoted to epifilm growth with an in-plane lattice mismatch, the epitaxy of 2D layered crystals on stepped substrates with a giant out-of-plane lattice mismatch is seldom reported. Here, taking the molecular-beam epitaxy of 2D semiconducting Bi2O2Se on 3D SrTiO3 substrates as an example, a step-climbing epitaxy growth strategy is proposed, in which the n-th (n = 1, 2, 3{\textellipsis}) epilayer climbs the step with height difference from out-of-plane lattice mismatch and continues to grow the n+1-th epilayer. Step-climbing epitaxy can spontaneously relax and release the strain from the out-of-plane lattice mismatch, which ensures the high quality of large-area epitaxial films. Wafer-scale uniform 2D Bi2O2Se single-crystal films with controllable thickness can be obtained via step-climbing epitaxy. Most notably, one-unit-cell Bi2O2Se films (1.2 nm thick) exhibit a high Hall mobility of 180 cm2 V-1 s-1 at room temperature, which exceeds that of silicon and other 2D semiconductors with comparable thickness. As an out-of-plane lattice mismatch is generally present in the epitaxy of layered materials, the step-climbing epitaxy strategy expands the existing epitaxial growth theory and provides guidance toward the high-quality synthesis of layered materials.},
	url = {https://onlinelibrary.wiley.com/doi/10.1002/adma.202202754},
	author = {Xuehan Zhou and Yan Liang and Huixia Fu and Ruixue Zhu and Jingyue Wang and Xuzhong Cong and Tan, Congwei and Congcong Zhang and Yichi Zhang and Yani Wang and Qijia Xu and Peng Gao and Hailin Peng}
}
