<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ji, Xiaoyang</style></author><author><style face="normal" font="default" size="100%">Huang, Zifeng</style></author><author><style face="normal" font="default" size="100%">Ohno, Yutaka</style></author><author><style face="normal" font="default" size="100%">Inoue, Koji</style></author><author><style face="normal" font="default" size="100%">Nagai, Yasusyohi</style></author><author><style face="normal" font="default" size="100%">Sakaida, Yoshiki</style></author><author><style face="normal" font="default" size="100%">Uratani, Hiroki</style></author><author><style face="normal" font="default" size="100%">Sun, Jinchi</style></author><author><style face="normal" font="default" size="100%">Shigekawa, Naoteru</style></author><author><style face="normal" font="default" size="100%">Liang, Jianbo</style></author><author><style face="normal" font="default" size="100%">Cheng, Zhe</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Interfacial reaction boosts thermal conductance of room‐temperature integrated semiconductor interfaces stable up to 1100° C</style></title><secondary-title><style face="normal" font="default" size="100%">Advanced Electronic Materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2024</style></year></dates><publisher><style face="normal" font="default" size="100%">Wiley Online Library</style></publisher><pages><style face="normal" font="default" size="100%">2400387</style></pages><isbn><style face="normal" font="default" size="100%">2199-160X</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>