Direct chemical vapor deposition growth and band-gap characterization of MoS2/h-BN van der Waals heterostructures on Au foils

Citation:

Zhang Z, Ji X, Shi J, Zhou X, Zhang S, Hou Y, Qi Y, Fang Q, Ji Q, Zhang Y, et al. Direct chemical vapor deposition growth and band-gap characterization of MoS2/h-BN van der Waals heterostructures on Au foils. ACS nano [Internet]. 2017;11:4328–4336.

摘要:

Stacked transition-metal dichalcogenides on hexagonal boron nitride (h-BN) are platforms for high-performance electronic devices. However, such vertical stacks are usually constructed by the layer-by-layer polymer-assisted transfer of mechanically exfoliated layers. This inevitably causes interfacial contamination and device performance degradation. Herein, we develop a two-step, low-pressure chemical vapor deposition synthetic strategy incorporating the direct growth of monolayer h-BN on Au foil with the subsequent growth of MoS2. In such vertical stacks, the interactions between MoS2 and Au are diminished by the intervening h-BN layer, as evidenced by the appearance of photoluminescence in MoS2. The weakened interfacial interactions facilitate the transfer of the MoS2/h-BN stacks from Au to arbitrary substrates by an electrochemical bubbling method. Scanning tunneling microscope/spectroscopy characterization shows that the central h-BN layer partially blocks the metal-induced gap states in MoS2/h-BN/Au ...

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SCI被引用次数:28.