<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Xiong, Xiong</style></author><author><style face="normal" font="default" size="100%">Tong, Anyu</style></author><author><style face="normal" font="default" size="100%">Xin Wang</style></author><author><style face="normal" font="default" size="100%">Liu, Shiyuan</style></author><author><style face="normal" font="default" size="100%">Li, Xuefei</style></author><author><style face="normal" font="default" size="100%">Ru HUANG</style></author><author><style face="normal" font="default" size="100%">Wu, Yanqing</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Demonstration of Vertically-stacked CVD Monolayer Channels: MoS 2 Nanosheets GAA-FET with I on&gt; 700 $μ$A/$μ$m and MoS2/WSe2 CFET</style></title><secondary-title><style face="normal" font="default" size="100%">2021 IEEE International Electron Devices Meeting (IEDM)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2021</style></year></dates><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pages><style face="normal" font="default" size="100%">7–5</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>