<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Li, Shengman</style></author><author><style face="normal" font="default" size="100%">Gu, Chengru</style></author><author><style face="normal" font="default" size="100%">Li, Xuefei</style></author><author><style face="normal" font="default" size="100%">Ru HUANG</style></author><author><style face="normal" font="default" size="100%">Wu, Yanqing</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">10-nm Channel Length Indium-Tin-Oxide transistors with I on= 1860 $μ$A/$μ$m, G m= 1050 $μ$S/$μ$m at V ds= 1 V with BEOL Compatibility</style></title><secondary-title><style face="normal" font="default" size="100%">2020 IEEE International Electron Devices Meeting (IEDM)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2020</style></year></dates><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pages><style face="normal" font="default" size="100%">40–5</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>