<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hu, Qianlan</style></author><author><style face="normal" font="default" size="100%">Hu, Ben</style></author><author><style face="normal" font="default" size="100%">Gu, Chengru</style></author><author><style face="normal" font="default" size="100%">Li, Tiaoyang</style></author><author><style face="normal" font="default" size="100%">Li, Sichao</style></author><author><style face="normal" font="default" size="100%">Li, Shengman</style></author><author><style face="normal" font="default" size="100%">Li, Xuefei</style></author><author><style face="normal" font="default" size="100%">Wu, Yanqing</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Improved current collapse in recessed AlGaN/GaN MOS-HEMTs by interface and structure engineering</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Transactions on Electron Devices</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year></dates><number><style face="normal" font="default" size="100%">11</style></number><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><volume><style face="normal" font="default" size="100%">66</style></volume><pages><style face="normal" font="default" size="100%">4591–4596</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>