<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Xuan, Y.</style></author><author><style face="normal" font="default" size="100%">Wu, Y. Q.</style></author><author><style face="normal" font="default" size="100%">Ye, P. D.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm</style></title><secondary-title><style face="normal" font="default" size="100%">Ieee Electron Device Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2008</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&amp;lt;Go to ISI&amp;gt;://WOS:000254225800004</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">4</style></number><volume><style face="normal" font="default" size="100%">29</style></volume><pages><style face="normal" font="default" size="100%">294-296</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><work-type><style face="normal" font="default" size="100%">Journal Article</style></work-type><custom7><style face="normal" font="default" size="100%">000254225800004</style></custom7></record></records></xml>