<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>6</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Xuan, Y.</style></author><author><style face="normal" font="default" size="100%">Shen, T.</style></author><author><style face="normal" font="default" size="100%">Wu, Y. Q.</style></author><author><style face="normal" font="default" size="100%">Xu, M.</style></author><author><style face="normal" font="default" size="100%">Ye, P. D.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">High-performance inversion-type E-mode In0.65Ga0.35As MOSFETs with ALD HfO2 as gate dielectric</style></title><secondary-title><style face="normal" font="default" size="100%">2008 66th Annual Device Research Conference</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2008</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&amp;lt;Go to ISI&amp;gt;://INSPEC:10519661</style></url></web-urls></urls><pages><style face="normal" font="default" size="100%">37-8</style></pages><isbn><style face="normal" font="default" size="100%">978-1-4244-1942-5</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><work-type><style face="normal" font="default" size="100%">Book</style></work-type></record></records></xml>