<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>5</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wu, Y. Q.</style></author><author><style face="normal" font="default" size="100%">Gu, J. J.</style></author><author><style face="normal" font="default" size="100%">Ye, P. D.</style></author><author><style face="normal" font="default" size="100%">Ieee</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Scaling of InGaAs MOSFETs into deep-submicron regime</style></title><secondary-title><style face="normal" font="default" size="100%">2010 22nd International Conference on Indium Phosphide and Related Materials</style></secondary-title><tertiary-title><style face="normal" font="default" size="100%">International Conference on Indium Phosphide and Related Materials</style></tertiary-title></titles><dates><year><style  face="normal" font="default" size="100%">2010</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&amp;lt;Go to ISI&amp;gt;://WOS:000287417700004</style></url></web-urls></urls><isbn><style face="normal" font="default" size="100%">978-1-4244-5920-9</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><work-type><style face="normal" font="default" size="100%">Book Section</style></work-type></record></records></xml>