<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wrachien, N.</style></author><author><style face="normal" font="default" size="100%">Cester, A.</style></author><author><style face="normal" font="default" size="100%">Zanoni, E.</style></author><author><style face="normal" font="default" size="100%">Meneghesso, G.</style></author><author><style face="normal" font="default" size="100%">Wu, Y. Q.</style></author><author><style face="normal" font="default" size="100%">Ye, P. D.</style></author><author><style face="normal" font="default" size="100%">Ieee</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Degradation of III-V inversion-type enhancement-mode MOSFETs</style></title><secondary-title><style face="normal" font="default" size="100%">2010 International Reliability Physics Symposium</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2010</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&amp;lt;Go to ISI&amp;gt;://WOS:000287515600087</style></url></web-urls></urls><pages><style face="normal" font="default" size="100%">536-542</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><work-type><style face="normal" font="default" size="100%">Journal Article</style></work-type><custom7><style face="normal" font="default" size="100%">000287515600087</style></custom7></record></records></xml>