<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Li, Tiaoyang</style></author><author><style face="normal" font="default" size="100%">Tian, Mengchuan</style></author><author><style face="normal" font="default" size="100%">Li, Shengman</style></author><author><style face="normal" font="default" size="100%">Huang, Mingqiang</style></author><author><style face="normal" font="default" size="100%">Xiong, Xiong</style></author><author><style face="normal" font="default" size="100%">Hu, Qianian</style></author><author><style face="normal" font="default" size="100%">Li, Sichao</style></author><author><style face="normal" font="default" size="100%">Li, Xuefei</style></author><author><style face="normal" font="default" size="100%">Wu, Yanqing</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures</style></title><secondary-title><style face="normal" font="default" size="100%">Advanced Electronic Materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&amp;lt;Go to ISI&amp;gt;://WOS:000441125200014</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">8</style></number><volume><style face="normal" font="default" size="100%">4</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><work-type><style face="normal" font="default" size="100%">Journal Article</style></work-type><custom7><style face="normal" font="default" size="100%">000441125200014</style></custom7></record></records></xml>