Top-Gate CVD WSe 2 pFETs with Record-High I d\~ 594 $μ$A/$μ$m, G m\~ 244 $μ$S/$μ$m and WSe 2/MoS 2 CFET based Half-adder Circuit Using Monolithic 3D Integration - Xiong, Xiong; Liu, Shiyuan; Liu, Honggang; Yang Chen; Shi, Xinhang; Xin Wang; Li, Xuefei; Ru HUANG; Wu, Yanqing (2022 International Electron Devices Meeting (IEDM), 2022)