Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency - Hu, Qianlan; Gu, Chengru; Zhu, Shenwu; Li, Qijun; Tong, Anyu; Kang, Jiyang; Ru HUANG; Wu, Yanqing (IEEE Electron Device Letters, 2022)