10-nm Channel Length Indium-Tin-Oxide transistors with I on= 1860 $μ$A/$μ$m, G m= 1050 $μ$S/$μ$m at V ds= 1 V with BEOL Compatibility - Li, Shengman; Gu, Chengru; Li, Xuefei; Ru HUANG; Wu, Yanqing (2020 IEEE International Electron Devices Meeting (IEDM), 2020)